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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ73AHXKSA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS family. It features a 200 V drain-source voltage rating and a continuous drain current of 5.5 A at 25°C. The device utilizes a TO-220-3 through-hole package with a maximum power dissipation of 40 W. Key electrical characteristics include a gate-source voltage range of -20 V to +20 V, a typical on-resistance of 600 mΩ, and a switching speed defined by rise and fall times of 40 ns and 30 ns respectively. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- OptiMOS technology for optimized performance in power switching applications
- Robust thermal management capabilities via TO-220-3 through-hole packaging
- High voltage tolerance suitable for demanding industrial environments
Applications
- Industrial motor control systems
- Power supply circuits
- General-purpose switching applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage during assembly processes.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Evaluate thermal resistance parameters against system heat dissipation capabilities. Consider the specific gate charge requirements for driving circuit compatibility when integrating into high-frequency switching topologies.
Part Context
This part belongs to the BUZ73 series of N-channel MOSFETs manufactured by Infineon Technologies. It represents a legacy silicon-based power transistor solution designed for robustness and reliability in standard industrial power electronics applications where surface-mount alternatives are not feasible.
Replacement Considerations
Cross-reference with other OptiMOS series devices offering similar voltage and current ratings. Verify pinout compatibility and thermal footprint dimensions before substituting to ensure mechanical fit and electrical equivalence in existing PCB layouts.
