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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ73AIN is an N-channel enhancement-mode SIPMOS power MOSFET manufactured by Infineon Technologies. It features a TO-220-3 through-hole package and operates with a drain-source voltage of 200 V and a continuous drain current of 5.5 A at case temperature. The device exhibits a maximum on-resistance of 600 mOhms at a gate-source voltage of 10 V. Power dissipation reaches 40 W under specified thermal conditions, with an operating temperature range spanning from -55 °C to +150 °C.
Feature Summary
- Utilizes SIPMOS technology for robust power switching performance
- Designed for high-voltage applications with 200 V breakdown capability
- Supports through-hole mounting via the TO-220-3 package
Applications
- High-voltage power switching circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify component authenticity and datasheet version before integration. Confirm that the specific suffix aligns with required thermal and electrical specifications. Check current lifecycle status as availability may vary across regions. Ensure proper handling procedures are followed during assembly to maintain device integrity.
Selection Notes
Select this component when a single N-channel MOSFET with 200 V rating and 5.5 A current capacity is required. The TO-220-3 package suits applications needing efficient heat dissipation through board mounting. Evaluate thermal resistance requirements against the 40 W dissipation limit to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the BUZ73 series of power transistors from Infineon Technologies. It represents a standard N-channel enhancement-mode device designed for general-purpose power switching. The series is characterized by its SIPMOS construction, offering a balance of voltage handling and current carrying capabilities in a durable through-hole format.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters if considering alternative manufacturers or updated series revisions.
