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Product Detailed Parameters
- Description：MOSFET N-CH 200V 5.5A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：600mOhm @ 3.5A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73ALHXKSA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS family. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 200 V and supports a continuous drain current of 5.5 A at 25°C. Its maximum on-resistance is specified at 600 mOhms. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 40 W.
Feature Summary
- OptiMOS technology integration for optimized switching performance
- High-voltage capability suitable for demanding power applications
- Robust thermal design for reliable operation under load
Applications
- Power supply circuits
- Motor control systems
- Industrial automation equipment
Procurement Notes
Verify the exact part number against official Infineon documentation, as suffixes may indicate specific packaging or tape-and-reel configurations that differ from standard tube packaging. Confirm RoHS compliance status and lead-free material declarations directly from the manufacturer's datasheet before procurement. Ensure the component meets all environmental and safety standards required for your specific application region.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required in a through-hole package. Consider the 600 mOhm on-resistance for efficiency calculations and verify that the TO-220-3 package fits your thermal management strategy. Evaluate the 200 V breakdown voltage against your circuit's peak voltage requirements to ensure adequate safety margins.
Part Context
This part belongs to the BUZ73 series of power MOSFETs manufactured by Infineon Technologies. The series is designed for general-purpose power switching applications. The specific model integrates advanced silicon gate technology to provide reliable performance in various electronic devices requiring robust voltage and current handling capabilities.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the TO-220-3 package, 200 V rating, and similar electrical characteristics. Verify pinout compatibility and thermal resistance values to maintain system integrity.
