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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUZ76 is an N-channel power MOSFET manufactured by Harris Corporation. It features a drain-to-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 3 A at case temperature (Tc). The device has a maximum power dissipation rating of 40 W at Tc. It is designed for through-hole mounting in a TO-220AB package.
Feature Summary
- N-channel metal oxide semiconductor field-effect transistor architecture
- High voltage blocking capability suitable for power switching applications
- Through-hole leaded package construction for board mounting
Applications
- Power switching circuits
- DC-DC converter topologies
- Motor control systems
Procurement Notes
Verify the manufacturer origin, as Harris Corporation assets were acquired by Renesas Electronics. Confirm the specific package variant matches the required TO-220AB footprint. Check datasheet revisions to ensure electrical parameters align with design requirements. Validate RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when a high-voltage N-channel switch is required. Ensure the thermal management design supports the 40 W dissipation limit at the operating case temperature. Verify that the gate drive voltage is sufficient to fully enhance the channel for low on-resistance operation. Consider the through-hole mounting method for mechanical stability.
Part Context
Harris Corporation was a prominent semiconductor manufacturer before its acquisition by Renesas Electronics. The BUZ76 belongs to the legacy power MOSFET portfolio. These components are widely used in industrial and consumer electronics. Availability may vary due to the corporate transition and product lifecycle status.
Replacement Considerations
Check for direct pin-compatible replacements from Renesas or other manufacturers offering equivalent 400 V, 3 A N-channel MOSFETs in TO-220 packages. Verify that any substitute meets the same thermal and electrical specifications.
