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Product Detailed Parameters
- Description：BXK9Q29-60A/SOT8002/MLPAK33
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：660 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：27W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：MLPAK33
- Package / Case：8-PowerVDFN
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Overview
The BXK9Q29-60EJ is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact MLPAK33 (SOT8002-3) surface-mounted package with side-wettable flanks. The device supports a drain-source voltage of 60 V and a continuous drain current of 21 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 29 mΩ at VGS = 10 V, a total gate charge of 18 nC, and a junction temperature range from -55 °C to 175 °C.
Feature Summary
- Logic-level compatible for efficient drive requirements
- Very fast switching performance enabled by Trench MOSFET technology
- Fully automotive qualified to AEC-Q101 standards at 175°C
- Side-wettable flanks facilitate optical solder inspection
Applications
- LED Lighting
- Switching circuits
- DC-DC conversion
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging or tape-and-reel specifications. Confirm that the component meets all required automotive qualification standards for your specific application environment before finalizing procurement decisions.
Selection Notes
Select this component when a small footprint and high thermal efficiency are required. The logic-level compatibility allows for direct driving from standard logic interfaces. Ensure the PCB design accommodates the MLPAK33 package dimensions and utilizes the side-wettable flanks for reliable joint verification.
Part Context
This part belongs to Nexperia's automotive-grade discrete semiconductor portfolio. It employs advanced Trench MOSFET technology to deliver low on-resistance within a miniaturized plastic thermal enhanced package. The device is designed specifically for demanding environments requiring high reliability and extended operating temperatures.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics carefully when evaluating potential replacements to ensure functional compatibility.
