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The BY251P-E3/73 is a silicon rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum average forward rectified current of 3 A and a maximum repetitive peak reverse voltage of 200 V. The component utilizes a DO-201AD plastic package with axial leads. It operates within a temperature range of -55 °C to +150 °C junction temperature. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 150 A.
Verify the specific suffix E3/73 against official Vishay documentation to confirm lead-free status and packaging type. Ensure the DO-201AD package dimensions match your PCB layout requirements. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability and authenticity before procurement.
Select this component when a 3 A continuous current rating and 200 V blocking voltage are required in an axial through-hole package. Consider its low leakage current and free-wheeling suitability for inductive load switching. Verify thermal management capabilities for operation up to 150 °C junction temperature in the target application environment.
This device belongs to the general-purpose rectifier diode category from Vishay. It is designed for use in power conversion and rectification circuits where reliable performance under standard operating conditions is necessary. The glass passivation enhances durability against moisture and chemical exposure compared to unpassivated alternatives.
Consult official Vishay substitution guides for equivalent parts. Generic replacements must match the 3 A current, 200 V voltage, and DO-201AD package constraints. Verify that any substitute maintains similar leakage and surge current specifications.