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The BYG10D-E3/TR3 is a silicon rectifier diode manufactured by Vishay General Semiconductor. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 200 V. The device utilizes the DO-214AC (SMA) surface-mount package. Key electrical characteristics include a maximum non-repetitive peak forward surge current of 30 A, a typical reverse leakage current of 1 µA at rated voltage, and a maximum forward voltage of 1.15 V at full load. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix against official Vishay documentation to confirm compliance status and qualification level. The E3 suffix indicates RoHS compliance, while HE3 variants may offer automotive qualification. Ensure the TR3 designation matches the required tape-and-reel packaging format for automated assembly processes.
Select this component when a standard recovery rectifier with avalanche capability is required in a compact SMA footprint. It serves as a suitable replacement for through-hole equivalents in space-constrained designs. Consider the thermal management requirements associated with the 1.5 A continuous current rating and the specific reverse voltage margin needed for the target application circuit.
This part belongs to the BYG10 series of standard avalanche SMD rectifiers from Vishay. The series covers voltage ratings from 200 V to 1600 V, all sharing the same 1.5 A current rating and DO-214AC package. The BYG10D specifically denotes the 200 V variant within this family, designed for general-purpose switching applications requiring robust surge handling.
Public confirmed substitute part numbers: BYG10D-HE3/TR3.