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The BYG10G-E3/TR3 is a silicon rectifier diode manufactured by Vishay General Semiconductor. It features a maximum average forward rectified current of 1.5 A and a repetitive peak reverse voltage of 400 V. The device utilizes a DO-214AC (SMA) surface-mount package. It is classified as a standard recovery rectifier with a typical reverse recovery time of 75 ns. The component supports a non-repetitive peak forward surge current of 30 A and exhibits a maximum forward voltage drop of 1.15 V at the rated current. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official Vishay documentation to confirm compliance status and qualification level. The E3 suffix indicates RoHS compliance, while HE3 variants may offer AEC-Q101 automotive qualification. Confirm the exact part number matches the required voltage and current ratings for the target application before procurement.
Select this component for designs requiring a 1.5 A surface-mount rectifier with 400 V blocking capability. Ensure the PCB layout accommodates the DO-214AC footprint. Consider thermal management requirements based on the 150°C maximum junction temperature limit. Verify that the 75 ns reverse recovery time meets the switching frequency requirements of the circuit.
This part belongs to the BYG series of standard avalanche SMD rectifiers from Vishay. The series covers voltage ratings from 200 V to 1600 V in the same DO-214AC package family. The BYG10G variant specifically addresses the 400 V rating within this lineup, providing a standardized solution for medium-voltage rectification tasks across various industrial and commercial sectors.
Direct substitutes include other Vishay parts within the BYG10 series with matching voltage ratings, such as BYG10D or BYG10J, provided the reverse voltage requirements align. Cross-brand replacements must match the 1.5 A current, 400 V rating, and DO-214AC package dimensions.