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The BYG10K-M3/TR3 is a silicon rectifier diode manufactured by Vishay General Semiconductor. It belongs to the BYG10 series and features a standard avalanche design with fast recovery characteristics. The component is housed in a DO-214AC (SMA) surface-mount package. Key electrical specifications include a maximum average forward current of 1.5 A, a repetitive peak reverse voltage of 800 V, and a maximum non-repetitive surge current of 30 A. It exhibits a low forward voltage drop and minimal reverse leakage current, ensuring efficient power conversion.
Verify the specific suffix configuration to ensure compatibility with required automotive or commercial grades. Confirm that the ordering part number matches the exact voltage rating and recovery time specifications needed for the target circuit design before finalizing procurement orders.
Select this component when a compact SMA package is required alongside high-voltage blocking capabilities. The fast recovery attribute makes it preferable over standard rectifiers in applications demanding reduced switching losses. Ensure thermal management aligns with the specified maximum junction temperature limits during continuous operation.
This device is part of the broader BYG10 family of surface-mount rectifiers from Vishay. The series offers various voltage ratings ranging from 200 V to 1600 V within the same physical footprint. This specific model targets applications requiring an 800 V breakdown voltage with optimized switching speed compared to slower general-purpose alternatives.
Direct substitutes within the same series include BYG10J-M3/TR3 for lower voltage requirements or BYG10L-M3/TR3 for higher voltage needs. Cross-brand replacements must match the DO-214AC package, 1.5 A current rating, and comparable reverse recovery time to maintain circuit performance integrity.