BYG20JHE3_A/H

BYG20JHE3_A/H

$0.37
  • Description:DIODE AVAL 600V 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:01b66f69d05a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE AVAL 600V 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 600 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:DO-214AC, SMA
  • Supplier Device Package:DO-214AC (SMA)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BYG20JHE3_A/H

Overview

The BYG20JHE3_A/H is an ultrafast avalanche rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a glass passivated pellet chip junction and operates in the SMA (DO-214AC) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 600 V and an average forward current of 1.5 A. Key electrical parameters include a maximum instantaneous forward voltage of 1.4 V at 1.5 A, a maximum DC reverse current of 1 µA at 25 °C, and an ultrafast reverse recovery time of 75 ns. It withstands a peak forward surge current of 30 A and dissipates up to 20 mJ of pulse energy in avalanche mode. The component is rated for operating junction and storage temperatures ranging from -55 °C to +150 °C.

Feature Summary

  • Ultrafast reverse recovery characteristics with soft recovery behavior
  • Avalanche capability for non-repetitive pulse energy dissipation
  • Glass passivated pellet chip junction construction
  • Low reverse leakage current

Applications

  • High frequency rectification in power supplies
  • Inverter circuits
  • Converter applications
  • Freewheeling diodes for consumer electronics
  • Automotive systems
  • Telecommunication equipment

Procurement Notes

Verify that the ordering code includes the HE3 suffix to confirm AEC-Q101 automotive qualification. Ensure the base part number matches the required voltage rating, as the J suffix specifically denotes the 600 V variant within the BYG20 series. Confirm the package type corresponds to SMA (DO-214AC). Check for specific revision codes appended to the ordering code if required by design specifications.

Selection Notes

Select this component when high-frequency switching efficiency and avalanche ruggedness are required in a compact surface-mount form factor. The 600 V rating makes it suitable for higher voltage DC-DC conversion stages. Consider the thermal resistance values relative to the PCB copper area, as heat dissipation significantly impacts the allowable average forward current derating curve above ambient temperatures.

Part Context

This device belongs to the BYG20D, BYG20G, and BYG20J family of ultrafast SMD rectifiers. All variants share identical physical dimensions, thermal characteristics, and general performance traits such as the 1.5 A current rating and 75 ns recovery time. The primary distinction lies in the maximum repetitive peak reverse voltage ratings: 200 V for the D variant, 400 V for the G variant, and 600 V for the J variant.

Replacement Considerations

BYG20J-E3/TR

FAQ

What is the maximum pulse energy the BYG20JHE3_A/H can handle in avalanche mode?

The device can dissipate a maximum non-repetitive pulse energy of 20 mJ in avalanche mode when the reverse current is 1 A and the junction temperature is 25 °C.

How does the HE3 suffix affect the component's qualification?

The HE3 suffix indicates that the component is RoHS-compliant and qualified according to the AEC-Q101 standard for automotive applications.

What is the typical thermal resistance from junction to lead?

The typical thermal resistance from junction to lead is 25 °C/W.

BYG20JHE3_A/HBYG20JHE3_A/H
$0.37
Buy Now