BYG21KHM3_A/I

BYG21KHM3_A/I

$0.11
  • Description:DIODE AVAL 800V 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:fbdfbc4a41bd Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVAL 800V 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 1.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):120 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 800 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:DO-214AC, SMA
  • Supplier Device Package:DO-214AC (SMA)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:Automotive
  • Qualification:AEC-Q101

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BYG21KHM3_A/I

Overview

The BYG21KHM3_A/I is a fast avalanche surface mount rectifier manufactured by Vishay General Semiconductor. It features a glass passivated pellet chip junction and operates within a temperature range of -55 °C to +150 °C. The device provides an average forward current of 1.5 A and supports peak forward surge currents up to 30 A. It offers maximum repetitive peak reverse voltages of 800 V (BYG21K) or 1000 V (BYG21M). Key electrical characteristics include a maximum reverse recovery time of 120 ns, a maximum instantaneous forward voltage of 1.6 V at 1.5 A, and a low reverse current of 1 μA at 25 °C. The component is housed in the SMA (DO-214AC) package.

Feature Summary

  • Fast reverse recovery time with soft recovery characteristic
  • Controlled avalanche capability for pulse energy handling
  • Glass passivated chip junction for reliability
  • Low profile package suitable for automated placement

Applications

  • Fast switching rectification in power supplies
  • Inverter and converter circuits
  • Freewheeling diodes for consumer electronics
  • Automotive electronic systems
  • Telecommunication equipment

Procurement Notes

Verify the specific voltage rating required: BYG21K denotes 800 V, while BYG21M denotes 1000 V. Confirm that the HM3 suffix indicates halogen-free compliance alongside RoHS standards. Ensure the _I suffix matches the required delivery mode quantity. Cross-reference the AEC-Q101 qualification status if automotive grade components are mandated for the design.

Selection Notes

Select this component when high-speed switching performance is critical due to its 120 ns reverse recovery time. The controlled avalanche feature makes it suitable for applications involving inductive load switching where non-repetitive pulse energy must be managed. Verify thermal resistance requirements against the application's ambient temperature conditions to ensure operation remains within the specified junction temperature limits.

Part Context

This part belongs to the BYG series of fast avalanche SMD rectifiers from Vishay. These devices utilize a glass passivated chip junction technology designed for robustness in surface mount applications. The series is engineered to meet stringent automotive reliability standards through AEC-Q101 qualification options.

Replacement Considerations

Direct substitutes within the same family include BYG21KHE3_A/I and BYG21K-M3/TR variants. For higher voltage ratings, consider the BYG21M series equivalents. Ensure any replacement maintains the SMA (DO-214AC) footprint and meets the 1.5 A average forward current requirement.

FAQ

What is the difference between the BYG21K and BYG21M models?

The primary difference is the maximum repetitive peak reverse voltage. The BYG21K model is rated for 800 V, whereas the BYG21M model is rated for 1000 V.

Does the BYG21KHM3_A/I support avalanche operation?

Yes, the device features controlled avalanche characteristics and can handle non-repetitive pulse energy in avalanche mode, specifically rated at 20 mJ under defined test conditions.

BYG21KHM3_A/IBYG21KHM3_A/I
$0.11
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