BYG21M R3G

BYG21M R3G

$0.60
  • Description:DIODE AVALANCHE 1KV 1.5A DO214AC
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3b2158d5356c Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVALANCHE 1KV 1.5A DO214AC
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.6 V @ 1.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):120 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 1000 V
  • Capacitance @ Vr, F:13pF @ 4V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-214AC, SMA
  • Supplier Device Package:DO-214AC (SMA)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:-
  • Qualification:-

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BYG21M R3G

Overview

The BYG21M R3G is a silicon avalanche rectifier manufactured by Taiwan Semiconductor Corporation, housed in the DO-214AC (SMA) surface-mount package. It features a maximum DC reverse voltage of 1000V and an average forward current rating of 1.5A. The device exhibits a forward voltage of 1.6V at 1.5A and a reverse leakage current of 1µA at 1000V. Key electrical characteristics include a fast recovery time of 120ns with a reverse recovery time under 500ns, and a junction capacitance of 13pF at 4V and 1MHz. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Incorporates avalanche ruggedness for enhanced reliability during transient voltage events
  • Utilizes glass passivation to protect the junction against mechanical stress and moisture
  • Designed for automated placement processes in surface-mount applications

Applications

  • High-voltage power supply circuits requiring avalanche capability
  • Fast recovery rectification in switching mode power supplies
  • General-purpose rectification in industrial electronic equipment

Procurement Notes

Verify the specific ordering suffix to confirm the reel packaging configuration, as variations exist within the BYG21M family. Confirm RoHS compliance status and halogen-free certification through the official datasheet before procurement. Ensure the supplier provides traceability documentation consistent with Taiwan Semiconductor quality standards. Cross-reference the manufacturer part number with distributor catalogs to avoid confusion with similar SMA packages.

Selection Notes

Select this component when a high-voltage rectifier with avalanche tolerance is required in a compact surface-mount form factor. The 1000V rating suits applications with significant voltage spikes or inductive load switching. Compare the 120ns reverse recovery time against circuit requirements to ensure compatibility with switching frequencies. Evaluate the thermal performance within the specified -55°C to 150°C junction temperature range for the intended operating environment.

Part Context

The BYG21M series belongs to Taiwan Semiconductor's lineup of fast recovery rectifiers designed for efficiency and reliability. These devices are engineered for high-speed switching applications where low reverse recovery charge is critical. The SMA package offers a balance between current handling capacity and board space optimization. This series supports various voltage ratings to accommodate different power system architectures.

BYG21M R3GBYG21M R3G
$0.60
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