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The BYG21M R3G is a silicon avalanche rectifier manufactured by Taiwan Semiconductor Corporation, housed in the DO-214AC (SMA) surface-mount package. It features a maximum DC reverse voltage of 1000V and an average forward current rating of 1.5A. The device exhibits a forward voltage of 1.6V at 1.5A and a reverse leakage current of 1µA at 1000V. Key electrical characteristics include a fast recovery time of 120ns with a reverse recovery time under 500ns, and a junction capacitance of 13pF at 4V and 1MHz. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix to confirm the reel packaging configuration, as variations exist within the BYG21M family. Confirm RoHS compliance status and halogen-free certification through the official datasheet before procurement. Ensure the supplier provides traceability documentation consistent with Taiwan Semiconductor quality standards. Cross-reference the manufacturer part number with distributor catalogs to avoid confusion with similar SMA packages.
Select this component when a high-voltage rectifier with avalanche tolerance is required in a compact surface-mount form factor. The 1000V rating suits applications with significant voltage spikes or inductive load switching. Compare the 120ns reverse recovery time against circuit requirements to ensure compatibility with switching frequencies. Evaluate the thermal performance within the specified -55°C to 150°C junction temperature range for the intended operating environment.
The BYG21M series belongs to Taiwan Semiconductor's lineup of fast recovery rectifiers designed for efficiency and reliability. These devices are engineered for high-speed switching applications where low reverse recovery charge is critical. The SMA package offers a balance between current handling capacity and board space optimization. This series supports various voltage ratings to accommodate different power system architectures.