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The BYG22B-M3/TR3 is a silicon ultrafast avalanche rectifier diode manufactured by Vishay General Semiconductor. It features a glass passivated junction and is housed in the DO-214AC (SMA) surface-mount package. The device is rated for a maximum repetitive reverse voltage of 100 V and an average forward rectified current of 2 A at 75°C. Key electrical characteristics include a typical reverse recovery time of 25 ns, a maximum non-repetitive peak surge current of 35 A, and a low reverse leakage current of 1 µA. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation to confirm packaging details and compliance status. Ensure the ordering part number matches the required tape and reel configuration. Confirm RoHS directive compliance and lead-free manufacturing status through the manufacturer's datasheet before procurement.
Select this component for designs requiring fast switching speeds and high reliability in compact surface mount layouts. The 100 V rating suits low voltage DC conversion tasks. Consider the thermal management requirements for the SMA package when designing PCB layouts for continuous 2 A operation.
This device belongs to the BYG22 series of ultrafast avalanche rectifiers from Vishay. The series offers various voltage ratings while maintaining consistent package dimensions and electrical performance profiles. The M3 suffix indicates lead-free construction and RoHS compliance, aligning with modern environmental regulations for electronic components.
Cross-reference with other Vishay BYG22 variants such as BYG22A or BYG22C if different voltage ratings are needed. Verify pinout compatibility and thermal characteristics when substituting with similar ultrafast diodes from other manufacturers.