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The BYG23T is an ultrafast avalanche SMD rectifier diode manufactured by Diotec Semiconductor. It features a maximum average forward rectified current (IFAV) of 1 A and a repetitive peak forward current (IFRM) of 3 A at 100°C. The device supports a peak forward surge current of 15 A at 50 Hz and 18 A at 60 Hz. Key electrical parameters include a maximum forward voltage (VF) of 1.9 V at 1 A, a reverse recovery time (trr) under 75 ns, and a non-repetitive peak reverse avalanche energy (ERSM) of 5 mJ. Operating temperatures range from -50°C to +175°C for both junction and storage.
Verify the specific package type and marking code against the official Diotec Semiconductor datasheet before integration. Confirm that the application environment remains within the specified thermal limits and does not exceed the non-repetitive avalanche energy ratings. Ensure compliance with RoHS and ELV directives as stated in the manufacturer documentation.
Select this component when high-speed rectification and avalanche ruggedness are required in a compact surface-mount form factor. The low reverse recovery time makes it suitable for applications demanding minimal switching losses. Evaluate the thermal resistance characteristics relative to the PCB copper pad size to ensure adequate heat dissipation during continuous operation.
This component belongs to the BYG series of ultrafast rectifiers produced by Diotec Semiconductor. These devices are designed for standard commercial and industrial applications requiring reliable performance in high-frequency environments. The series emphasizes fast switching speeds combined with robust surge handling capabilities.
Consult the official Diotec Semiconductor replacement guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' ultrafast diodes without verifying pinout, voltage ratings, and thermal specifications.