SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYG24DHE3_A/I is a fast avalanche surface-mount rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a glass passivated junction and operates in the SMA (DO-214AC) package. The device supports a maximum repetitive peak reverse voltage of 200 V and an average forward current of 1.5 A at 65 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.25 V at 1.5 A, a peak forward surge current of 30 A, and a maximum reverse recovery time of 140 ns. It is rated for a pulse energy of 20 mJ in avalanche mode and functions within a junction temperature range of -55 to +150 °C.
Verify that the component matches the exact Vishay part number BYG24DHE3_A/I. Confirm the SMA (DO-214AC) package type and the 200 V reverse voltage rating. Ensure the supplier provides documentation confirming AEC-Q101 qualification if automotive compliance is required. Cross-reference the datasheet revision date to ensure technical accuracy.
Select this component for designs requiring fast switching speeds and avalanche ruggedness in a compact surface-mount form factor. The 1.5 A current rating and 200 V blocking voltage define its operational limits. Consider the thermal resistance values when designing heat dissipation strategies for high ambient temperatures or dense PCB layouts.
This component belongs to the BYG24 series of fast avalanche SMD rectifiers from Vishay. The series includes variants with different voltage ratings, specifically the BYG24G (400 V) and BYG24J (600 V). All variants share identical physical dimensions and thermal characteristics while differing in their breakdown voltage specifications.
Direct substitutes include other Vishay parts within the same series, such as the BYG24GHE3_A/I or BYG24JHE3_A/I, provided the voltage requirements align. Verify that any replacement maintains the SMA package footprint and meets the 140 ns reverse recovery time specification.
Yes, the HE3 suffix indicates that the device is AEC-Q101 qualified.
The device is rated for a non-repetitive pulse energy of 20 mJ in avalanche mode.
No, it utilizes a glass passivated junction structure.