BYG24GHE3_A/I

Overview

The BYG24GHE3_A/I is a single avalanche diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage of 400 V and an average rectified forward current of 1.5 A per diode. The component utilizes Avalanche technology and is housed in the DO-214AC (SMA) surface-mount package. It operates within a junction temperature range of -65°C to 150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

• Avalanche technology designed for energy absorption capabilities
• Automotive grade qualification ensuring reliability in harsh environments
• Surface mount construction for automated assembly integration

Applications

• Automotive electronic circuits requiring surge protection
• Clamping applications for inductive load switching
• Transient voltage suppression in power supply inputs

Procurement Notes

Verify the specific suffix against official datasheets, as variations may indicate differences in tape-and-reel specifications or regional manufacturing origins. Confirm that the AEC-Q101 qualification status aligns with your project's automotive compliance requirements before finalizing procurement orders.

Selection Notes

Select this component when a robust solution for handling avalanche energy is required in space-constrained designs. The SMA package offers a compact footprint suitable for high-density PCB layouts. Ensure the 400V rating provides adequate margin for the specific circuit's peak inverse voltage conditions.

Part Context

This part belongs to Vishay's discrete semiconductor portfolio, specifically within the avalanche diode category. These components are engineered to withstand repetitive avalanche breakdown events without degradation, making them distinct from standard rectifiers or Zener diodes used primarily for voltage regulation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.