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The BYM11-50HE3_A/H is a fast recovery rectifier diode from Vishay’s SUPERECTIFIER series, designed for surface-mount applications in the DO-213AB (GL41) package. It features a 1 A average forward current and a 50 V repetitive peak reverse voltage. Key electrical parameters include a maximum forward voltage of 1.3 V, a reverse leakage current of 50 uA, and a typical recovery time of 150 ns. The device supports a surge current of 30 A and operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status and ensure the component meets AEC-Q101 requirements if automotive qualification is necessary. Check for any design-in restrictions noted by the manufacturer.
Select this component when a 50 V blocking capability and 1 A continuous current are required in a surface-mount form factor. Consider the 150 ns recovery time for switching frequency limitations. Ensure the PCB footprint matches the DO-213AB specification for proper thermal and mechanical performance.
This part belongs to Vishay’s SUPERECTIFIER line, which focuses on fast-recovery silicon planar p-n junction rectifiers. The series provides alternatives to through-hole devices while maintaining robust electrical performance in a small outline package suitable for modern electronics manufacturing.
Cross-reference with BYM11-50-E3/96 or BYM11-50HE3/96 for similar specifications. Verify that substitute parts match the 50 V rating, 1 A current capacity, and DO-213AB package dimensions before integration.