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The BYM13-20HE3_A/I is a silicon Schottky barrier rectifier manufactured by Vishay Semiconductors. It features a single diode configuration housed in the DO-213AB (MELF) surface-mount package. The device supports an average forward current of 1 A and a repetitive peak reverse voltage of 20 V. Key electrical characteristics include a maximum forward voltage of 500 mV, a reverse leakage current of 500 uA, and a forward surge current capability of 30 A. It operates within a junction temperature range of -55 °C to +125 °C.
Verify the specific suffix _A/I against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the component meets the required environmental standards such as RoHS and REACH compliance before integration. Cross-reference the part number with authorized distributors to confirm authenticity and traceability documentation availability.
Select this component when a compact MELF package is required for surface-mount assembly. Choose based on the 1 A current rating and 20 V voltage breakdown limits. Consider the low forward voltage characteristic for thermal management in low-voltage applications. Verify compatibility with automated pick-and-place equipment due to the small form factor.
This part belongs to the BYM13 series of SuperEctifier Schottky rectifiers from Vishay. These devices are designed for high-reliability applications requiring fast switching and low leakage. The series offers various voltage ratings and current capabilities in standardized packages like DO-204AL and MELF formats.
Check for direct equivalents such as BYM13-20-E3/96 or BYM13-20HE3-A/H from Vishay. Verify pinout compatibility and package dimensions (DO-213AB) for any cross-brand substitutions. Ensure electrical parameters match or exceed the original requirements.