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Product Detailed Parameters
- Description：DIODE STANDARD 600V 60A TO2472
- Series：-
- Mfr：WeEn Semiconductors
- Package：Tube
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io)：60A
- Voltage - Forward (Vf) (Max) @ If：2 V @ 60 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：55 ns
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：175°C
- Grade：-
- Qualification：-
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Overview
The BYQ60W-600PT2Q is a single ultrafast power diode manufactured by WeEn Semiconductors, housed in a TO-247-2L through-hole package. It features a peak reverse voltage of 600 V and an average forward current rating of 60 A. The device exhibits a maximum forward voltage of 1.55 V and a reverse leakage current of 10 uA. Its recovery time is specified at 55 ns, with a maximum surge current capability of 660 A. Operating temperatures range from -55 C to +175 C.
Feature Summary
- Designed for fast switching and soft reverse recovery characteristics
- Utilizes SABER platinum-doped technology for optimized performance
- Planar passivation structure ensures high reliability and ruggedness
Applications
- High-frequency switch-mode power supplies (SMPS)
- Output rectification in DC-DC converters
- Free-wheeling applications in inductive load circuits
Procurement Notes
Verify the specific suffix 'Q' against the manufacturer's latest datasheet to confirm marking orientation and packaging type. Confirm RoHS compliance status directly with the supplier. Ensure the TO-247-2L lead form matches your PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when low reverse recovery charge and fast switching speeds are critical for efficiency. The TO-247-2L package supports high thermal dissipation for continuous 60 A operation. Compare forward voltage drop against recovery time requirements to balance conduction losses and switching losses in the target circuit design.
Part Context
This part belongs to the BYQ series of ultrafast power diodes from WeEn Semiconductors. The series utilizes SABER technology, which combines platinum doping with planar passivation. This technology provides a superior trade-off between forward voltage and reverse recovery time compared to standard hyperfast diodes.
Replacement Considerations
Check for direct pin-compatible alternatives within the same BYQ family or other manufacturers offering identical TO-247-2L packages with matching 600V/60A ratings. Verify that substitute parts meet the same 55 ns recovery time specification.
