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The BYT51D-TAP is a silicon avalanche rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. It features a 200 V maximum repetitive peak reverse voltage and supports an average forward rectified current of 1.5 A. The device utilizes a glass passivated junction for reliability and is housed in a hermetically sealed SOD-57 (DO-213AA) through-hole package. Key electrical characteristics include low reverse leakage current and lead-free construction compliant with RoHS directives.
Verify the specific suffix 'TAP' corresponds to the tape-and-reel packaging format required for your assembly line. Confirm that the SOD-57 footprint matches your PCB design, as this is a through-hole component despite the surface-mount-style designation. Ensure the order specifies the avalanche rating if surge handling is critical to your application design.
Select this component when a through-hole solution is required for high-voltage applications up to 200 V. The 1.5 A current rating suits moderate power levels. Consider the avalanche characteristic if the circuit experiences significant inductive kickback or voltage transients that exceed standard breakdown limits without damaging the junction.
This part belongs to Vishay's BYT series of fast recovery and avalanche rectifiers. The BYT51D variant specifically denotes the 200 V, 1.5 A specification within the SOD-57 package family. The 'TAP' suffix indicates the specific reel configuration used for automated placement systems, distinguishing it from bulk or cut-tape variations.
Direct substitutes must match the 200 V reverse voltage, 1.5 A forward current, and SOD-57 through-hole package. Verify that any replacement also possesses avalanche ratings if transient suppression is required. Cross-reference pinouts to ensure compatibility with existing board layouts.