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The BYT56J-TR is a fast avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage of 600 V and an average rectified current of 3 A. The forward voltage is 1.4 V at 3 A, with a reverse recovery time of less than or equal to 500 ns for currents greater than 200 mA. The device operates within a junction temperature range of -55°C to 175°C and utilizes the SOD-64 axial through-hole package.
Verify the specific suffix 'J' indicates the 600V rating variant distinct from other series members like 'M'. Confirm RoHS compliance status as lead-free components are standard for this division. Ensure the SOD-64 axial package matches the PCB footprint requirements before finalizing procurement orders.
Select this component when a 600V blocking voltage and 3A continuous current capacity are required. The fast recovery time makes it appropriate for circuits where standard recovery diodes would cause excessive switching losses. Consider the axial leaded package for manual assembly or specific mechanical mounting constraints compared to surface mount alternatives.
This part belongs to the BYT56 series of fast avalanche diodes from Vishay. The series includes variants with different voltage ratings such as 400V (BYT56G) and 1000V (BYT56M). All share similar current handling and packaging formats, differing primarily in their peak reverse voltage specifications and associated avalanche energy ratings.
Direct substitutes include BYT56G-TR for lower voltage applications and BYT56M-TR for higher voltage requirements. Cross-brand equivalents must match the 600V/3A rating and SOD-64 package dimensions. Verify that any replacement maintains comparable reverse recovery times to ensure circuit performance integrity.