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The BYT56K-TR is a fast avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features an 800 V maximum DC reverse voltage and a 3 A average rectified current rating. The device utilizes the SOD-64 axial through-hole package, suitable for high-reliability applications. Key electrical characteristics include a forward voltage of 1.4 V at 3 A and a reverse leakage current of 5 µA at 1000 V. The component operates within a junction temperature range of -55°C to 175°C and exhibits a reverse recovery time of less than or equal to 500 ns.
Verify the specific suffix K-TR against the official Vishay datasheet to confirm the 800V rating and SOD-64 axial packaging configuration. Ensure that the procurement documentation explicitly references the fast avalanche characteristic and sinterglass construction, as these are critical differentiators from standard rectifier diodes in the same series.
Select this component when circuit requirements demand high voltage blocking (800V) combined with significant current handling (3A) in a through-hole format. The fast avalanche property makes it suitable for scenarios involving inductive load switching where rapid energy dissipation is necessary. Compare against lower voltage variants like the BYT56J if system voltage constraints allow for reduced ratings.
This part belongs to the BYT56 series of fast avalanche sinterglass diodes from Vishay. The series offers various voltage ratings, with the K variant specifically designated for 800V operation. These diodes are engineered for high-reliability applications where standard silicon rectifiers might fail under avalanche stress conditions.
Direct substitutes within the same series include the BYT56M-TR for 1000V applications. Cross-brand replacements must match the 800V/3A rating, SOD-64 axial package, and fast avalanche specifications to ensure equivalent performance in high-voltage switching environments.