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The BYV26B-TR is an ultra-fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a single configuration with a maximum average forward current of 1 A and a repetitive peak reverse voltage of 400 V. The device exhibits a maximum reverse recovery time of 30 ns and a typical forward voltage of 2.5 V at 1 A. It supports a peak forward surge current of 30 A and operates within a junction temperature range of -55 °C to +175 °C. Packaged in the SOD-57 through-hole format, it weighs approximately 369 mg.
Verify the specific ordering code suffix against the manufacturer's official documentation to confirm packaging details. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure technical specifications align with circuit requirements before finalizing procurement orders.
Select this component when high-speed rectification is required alongside robustness against inductive switching transients. The SOD-57 package facilitates automated through-hole assembly processes. Evaluate thermal resistance parameters to ensure adequate heat dissipation under continuous operating conditions.
This part belongs to the BYV26x series of ultra-fast avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants differentiated primarily by their reverse voltage ratings, ranging from 200 V to 1000 V. All members share identical physical dimensions and general electrical characteristics except for breakdown limits.
Cross-reference with other Vishay BYV26x series parts or equivalent ultra-fast recovery diodes offering similar 400 V ratings and SOD-57 packaging. Verify pinout compatibility and thermal performance metrics before substitution.
The maximum reverse recovery time is specified as 30 ns.
Yes, the device is avalanche rated and can handle non-repetitive reverse avalanche energy of 10 mJ under specific test conditions.