BYV26D-TR

BYV26D-TR

$0.46
  • Description:DIODE AVALANCHE 800V 1A SOD57
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d7977c582d5f Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVALANCHE 800V 1A SOD57
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:2.5 V @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):75 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 800 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:SOD-57, Axial
  • Supplier Device Package:SOD-57
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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BYV26D-TR

Overview

The BYV26D-TR is an ultra-fast avalanche sinterglass diode manufactured by Vishay Semiconductors. It features a single configuration in an SOD-57 package with plated axial leads. The device supports a repetitive peak reverse voltage of 800 V and an average forward current of 1 A. Peak forward surge current reaches 30 A for 10 ms half-sine waves. Electrical characteristics include a maximum forward voltage of 2.5 V at 1 A, a maximum reverse current of 5 µA at rated voltage, and a reverse recovery time of 75 ns. Non-repetitive reverse avalanche energy is rated at 10 mJ. Operating temperatures range from -55 °C to +175 °C.

Feature Summary

  • Ultra-fast switching performance with low reverse recovery time
  • High reverse voltage capability up to 800 V
  • Hermetically sealed glass passivated junction
  • Designed for high reliability in harsh environments

Applications

  • Switched mode power supplies
  • High-frequency inverter circuits

Procurement Notes

Verify the specific ordering code matches the required tape and reel quantity. Confirm that the SOD-57 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient thermal resistance under expected operating loads. Validate compliance requirements against project specifications before finalizing procurement.

Selection Notes

Select this component when applications require high blocking voltage combined with fast recovery characteristics. The 800 V rating distinguishes it from lower voltage variants within the same series. Consider the 75 ns reverse recovery time for high-frequency operation where switching losses must be minimized. Verify that the 1 A average current rating meets the circuit's continuous load requirements.

Part Context

This part belongs to the BYV26x series of ultra-fast avalanche sinterglass diodes. Other members include BYV26A (200 V), BYV26B (400 V), BYV26C (600 V), and BYV26E (1000 V). All share similar physical packaging and general electrical behaviors but differ in breakdown voltage ratings. The series is designed for robust performance in demanding power electronics applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the reverse recovery time for the BYV26D?

The reverse recovery time is 75 ns.

Does the BYV26D support avalanche operation?

Yes, it is an avalanche diode with a non-repetitive reverse avalanche energy rating of 10 mJ.

BYV26D-TRBYV26D-TR
$0.46
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