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The BYV29FD-600,118 is an enhanced ultrafast power diode manufactured by WeEn Semiconductors. It features a peak repetitive reverse voltage of 600 V and a maximum average forward rectified current of 9 A. The device exhibits a typical reverse recovery time of 35 ns and a maximum forward voltage of 1.9 V at 8 A. It is housed in a DPAK surface-mount package with a peak non-repetitive forward surge current rating of 91 A.
Verify the specific suffix
Select this component for designs requiring fast recovery times under 40 ns and moderate current handling up to 9 A. Ensure the thermal management solution supports the DPAK package's dissipation capabilities. Confirm that the 600 V reverse voltage rating exceeds the circuit's peak inverse voltage requirements with adequate margin.
This part belongs to the BYV29FD series of enhanced ultrafast power diodes from WeEn Semiconductors. The series is designed to replace standard fast recovery diodes in applications demanding lower reverse recovery charge and faster switching speeds. The FD designation typically indicates the specific package variant and electrical enhancements within the broader BYV29 family.
Direct substitutes include the BYV29F-600 or BYV29B-600 if reverse recovery time specifications are less critical. Verify pinout compatibility and thermal resistance values when cross-referencing with other manufacturers' ultrafast diodes.