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Product Detailed Parameters
- Description：DIODE STANDARD 600V 30A TO3PF
- Series：-
- Mfr：WeEn Semiconductors
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io)：30A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：65 ns
- Current - Reverse Leakage @ Vr：10 µA @ 600 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PF
- Operating Temperature - Junction：175°C
- Grade：-
- Qualification：-
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Overview
The BYV30JT-600PMQ is an ultrafast recovery diode manufactured by WeEn Semiconductors, designed for high-voltage and fast-switching applications. It features a 600 V reverse voltage rating and a 30 A forward current capability in a TO-3PF through-hole package. Key electrical parameters include a maximum surge current of 330 A, a forward voltage of 1.18 V, and a reverse leakage current of 2 uA. The device exhibits a recovery time of 65 ns and operates within a temperature range up to +175 C.
Feature Summary
- Ultrafast recovery characteristics optimized for high-frequency switching efficiency
- Robust construction supporting high surge current loads
- Low thermal resistance design for effective heat dissipation
Applications
- High-voltage power supply circuits
- Fast switching rectification in industrial equipment
- Inverter and converter topologies requiring rapid recovery
Procurement Notes
Verify the specific suffix 'MQ' against the official manufacturer datasheet to confirm packaging details and marking variations. Ensure compatibility with TO-3PF mounting requirements and validate thermal management solutions for the specified operating temperature range before integration.
Selection Notes
Select this component when applications demand a balance of high voltage blocking capability and rapid reverse recovery speed. The TO-3PF package suits high-power through-hole designs where robust mechanical mounting and efficient heat transfer are critical for maintaining performance under continuous load conditions.
Part Context
This part belongs to the BYV series of ultrafast recovery diodes from WeEn Semiconductors. The series is engineered for power electronics applications requiring low reverse recovery charge and high reliability. The TO-3PF variant provides a rugged metal case suitable for demanding industrial environments compared to plastic packages.
Replacement Considerations
Direct substitutes must match the 600 V / 30 A rating, TO-3PF package, and ultrafast recovery specifications. Verify pinout compatibility and thermal characteristics. Cross-reference with other manufacturers' ultrafast diodes offering similar 65 ns recovery times and surge ratings.
