Diode Arrays BYV32-200G product image

BYV32-200G

$1.75
  • Description:DIODE ARRAY GP 200V 8A TO-220
  • Series:SWITCHMODE™

SKU:d22cfffad014 Category: Brand:

  
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BYV32-200G is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY GP 200V 8A TO-220. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV32-200G

  • Description:DIODE ARRAY GP 200V 8A TO-220
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 200 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV32-200G

BYV32-200G

Diode Arrays Overview

The BYV32-200G is an ultrafast recovery rectifier manufactured by onsemi, designed for high-speed switching applications. It features a single diode configuration housed in a TO-220-3 through-hole package. The device supports a maximum repetitive peak reverse voltage of 200 V and a continuous forward current of 8 A. Key electrical characteristics include a maximum forward voltage of 1.01 V, a reverse leakage current of 3.5 uA, and a fast recovery time of 35 ns. It can withstand a maximum surge current of 100 A.

Diode Arrays Feature Summary

  • Ultrafast recovery performance with 35 ns switching speed
  • High thermal stability suitable for demanding power environments
  • Robust construction for high surge current handling

Diode Arrays Applications

  • High-frequency DC-DC converters
  • Free-wheeling diodes in PWM circuits
  • Inverter and chopper circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'G' to confirm RoHS compliance status as indicated in distributor databases. Ensure the TO-220-3 package dimensions match your PCB footprint requirements. Confirm that the 200 V reverse voltage rating provides sufficient margin for your circuit's peak inverse voltage conditions. Check datasheet limits for junction temperature and thermal resistance during design.

Diode Arrays Selection Notes

Select this component when ultrafast recovery times are critical to minimize switching losses and electromagnetic interference. The 8 A current rating suits moderate power applications requiring efficient rectification. Consider the TO-220-3 package for ease of heatsinking compared to surface-mount alternatives. Evaluate the 1.01 V forward voltage drop against efficiency requirements at full load currents.

Diode Arrays Part Context

This part belongs to the BYV32 series of ultrafast recovery rectifiers from onsemi. The series is engineered for general-purpose high-speed rectification where standard silicon diodes are too slow. The 'G' suffix typically denotes environmental compliance. These devices complement onsemi's broader portfolio of power management and discrete semiconductor solutions.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 200 V reverse voltage, 8 A forward current, and 35 ns recovery time specifications exactly to ensure circuit compatibility.

BYV32-200GBYV32-200G
$1.75
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