Diode Arrays BYV34G-600,127 product image

BYV34G-600,127

$2.36
  • Description:DIODE ARRAY GP 600V 20A I2PAK
  • Series:-

SKU:5442cc77a0c9 Category: Brand:

  
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BYV34G-600,127 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 600V 20A I2PAK. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV34G-600,127

  • Description:DIODE ARRAY GP 600V 20A I2PAK
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):20A
  • Voltage - Forward (Vf) (Max) @ If:1.48 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):60 ns
  • Current - Reverse Leakage @ Vr:50 µA @ 600 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package:I2PAK
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV34G-600,127

BYV34G-600,127

Diode Arrays Overview

The BYV34G-600,127 is a dual ultrafast power diode manufactured by WeEn Semiconductors. It is housed in a low-profile SOT226 plastic package, also known as TO-262. The device features a peak reverse repetitive voltage of 600 V and supports a maximum average forward current of 20 A. Key electrical characteristics include a forward voltage of 0.92 V, a peak non-repetitive surge current of 120 A, and a maximum junction temperature of 150 °C. The component exhibits a fast recovery time of 50 ns.

Diode Arrays Feature Summary

  • Dual configuration integrating two independent diodes within a single compact package to reduce board space.
  • Ultrafast recovery performance with a 50 ns characteristic suitable for high-frequency switching applications.
  • Low forward voltage drop of 0.92 V to minimize conduction losses and improve overall efficiency.

Diode Arrays Applications

  • High-frequency DC/DC converters
  • Free-wheeling rectification in power supplies
  • Snubber circuits

Diode Arrays Procurement Notes

Verify the specific ordering part number against official manufacturer documentation to ensure correct package type and electrical ratings. Confirm RoHS compliance status and lead-free plating details directly from the datasheet before procurement. Ensure the supplier provides valid traceability documents matching the WeEn Semiconductors manufacturing standards.

Diode Arrays Selection Notes

Select this component when a dual-diode configuration is required for space-constrained designs. The 600 V rating and 20 A current capacity make it suitable for medium-power industrial applications. Consider the 150 °C maximum junction temperature for thermal management requirements in high-density environments.

Diode Arrays Part Context

This component belongs to the BYV34G series of ultrafast rectifiers from WeEn Semiconductors. It utilizes the SOT226 (TO-262) package, which offers improved thermal performance compared to standard through-hole packages while maintaining a low profile. The series is designed for general-purpose high-speed switching applications requiring robust reliability.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative components based on identical voltage, current, and package specifications using official cross-reference data.

BYV34G-600,127BYV34G-600,127
$2.36
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