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BYV42G-200,127 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 200V 15A TO262. Review the specifications below when checking this part for your BOM.
The BYV42G-200,127 is a dual ultrafast power diode manufactured by WeEn Semiconductors. It integrates two independent diodes within a single SOT226A (I2PAK) low-profile plastic package. The component supports a repetitive peak reverse voltage of 200 V and an average forward current of 30 A. Key electrical characteristics include a maximum forward voltage of 0.78 V and a typical reverse recovery time of 20 ns. The device is rated for a maximum junction temperature of 150 °C and can withstand a non-repetitive surge current of 150 A.
Verify the specific suffix '127' to confirm the tape-and-reel packaging format required for automated assembly processes. Ensure the procurement channel provides official traceability documentation from WeEn Semiconductors or authorized distributors. Confirm RoHS compliance status matches the latest manufacturing specifications before finalizing orders.
Select this component when circuit designs require dual isolated rectification paths within a limited board area. The low-profile I2PAK package facilitates efficient heat dissipation compared to standard packages. Engineers should evaluate the 200 V rating against peak inverse voltages in the target application to ensure adequate safety margins during transient conditions.
This part belongs to the BYV42G series of ultrafast recovery diodes produced by WeEn Semiconductors. The manufacturer acquired the discrete semiconductor portfolio previously held by NXP Semiconductors. The product line focuses on high-efficiency power management solutions utilizing advanced silicon technologies for industrial and consumer electronics markets.
Direct replacements must match the 200 V reverse voltage, 30 A current rating, and SOT226A package. Verify that substitute components maintain equivalent reverse recovery times to preserve switching performance in high-frequency circuits.
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