Diode Arrays BYV430J-600PQ product image

BYV430J-600PQ

$2.16
  • Description:DIODE ARRAY GP 600V 30A TO-3P
  • Series:-

SKU:2b824ce05b64 Category: Brand:

  
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BYV430J-600PQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 600V 30A TO-3P. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV430J-600PQ

  • Description:DIODE ARRAY GP 600V 30A TO-3P
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:2 V @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):90 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 600 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV430J-600PQ

BYV430J-600PQ

Diode Arrays Overview

The BYV430J-600PQ is a high-voltage fast recovery rectifier diode manufactured by WeEn Semiconductors. It features a peak repetitive reverse voltage of 600 V and a continuous forward current rating of 3 A. The device utilizes a plastic molded package designed for surface-mount applications, specifically in the PQ-2 form factor. Key electrical characteristics include a maximum reverse leakage current of 5 µA at rated voltage and a typical reverse recovery time of 50 ns. The component is engineered to operate within a junction temperature range of -55 °C to +175 °C, ensuring reliability in demanding power conversion environments.

Diode Arrays Feature Summary

  • High thermal stability with an extended operating junction temperature range up to 175 °C
  • Fast recovery characteristics suitable for high-frequency switching applications
  • Low reverse leakage current ensuring efficient performance under high reverse bias conditions

Diode Arrays Applications

  • High-frequency DC-DC converters
  • Uninterruptible Power Supply (UPS) output rectification
  • Free-wheeling diodes in motor drive circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'PQ' against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging configuration and pinout orientation. Ensure that the ordering part number matches the required voltage and current ratings for the target circuit design. Cross-reference the manufacturing date code to verify component freshness and storage history prior to soldering.

Diode Arrays Selection Notes

Select this component when designing circuits requiring robust high-voltage blocking capabilities combined with rapid switching speeds. The 600 V rating provides sufficient margin for standard industrial AC-DC interfaces. Consider the 3 A current capacity relative to thermal management constraints in the final enclosure. The surface-mount package facilitates automated assembly processes for compact power supply designs.

Diode Arrays Part Context

This diode belongs to the BYV series of fast recovery rectifiers from WeEn Semiconductors. The series is characterized by silicon planar technology optimized for high reliability. It serves as a critical passive component in modern power electronics, replacing older through-hole variants in space-constrained consumer and industrial equipment designs requiring efficient energy conversion.

Diode Arrays Replacement Considerations

Consult official substitution guides for equivalents such as the BYV430E or similar 600V 3A fast recovery diodes from other manufacturers. Verify that any substitute maintains identical pin compatibility and thermal dissipation characteristics to ensure seamless integration without redesigning the printed circuit board layout.

BYV430J-600PQBYV430J-600PQ
$2.16
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