BYV430K-300PQ

$0.86

Description：DIODE ARRAY GP 300V 30A TO-3P
Series：-

SKU:0f38650b0ef7 Category: Diode Arrays Brand: WeEn Semiconductors

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Product introduction

BYV430K-300PQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 300V 30A TO-3P. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV430K-300PQ

Description：DIODE ARRAY GP 300V 30A TO-3P
Series：-
Mfr：WeEn Semiconductors
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：300 V
Current - Average Rectified (Io) (per Diode)：30A
Voltage - Forward (Vf) (Max) @ If：1.25 V @ 30 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：55 ns
Current - Reverse Leakage @ Vr：10 µA @ 300 V
Operating Temperature - Junction：175°C (Max)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

Diode Arrays datasheet and documents for BYV430K-300PQ

BYV430K-300PQ

Diode Arrays Overview

The BYV430K-300PQ is a dual ultrafast power diode manufactured by WeEn Semiconductors. It features a common cathode configuration housed in a TO-3P (SC-65-3) through-hole package. The device supports a repetitive peak reverse voltage of 300 V and an average forward current of 30 A per leg. It exhibits a maximum forward voltage drop of 1.25 V at rated conditions. The component utilizes silicon technology and includes a soft recovery characteristic to minimize switching noise.

Diode Arrays Feature Summary

Dual ultrafast power diode with common cathode topology
Soft recovery characteristic for reduced electromagnetic interference
High surge current capability up to 300 A

Diode Arrays Applications

High-frequency DC-DC converters
Uninterruptible power supply (UPS) systems
Industrial motor drive circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix PQ corresponds to the tube packaging format when sourcing. Confirm that the TO-3P pinout matches the target PCB footprint, as lead configurations can vary between manufacturers. Ensure compliance with RoHS and REACH regulations required for the intended market. Cross-reference the datasheet revision date to confirm thermal resistance values align with the design requirements.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and high current handling in a robust through-hole package. The common cathode arrangement simplifies circuit layout for half-bridge or synchronous rectifier topologies. Evaluate the thermal performance based on the specified junction-to-case thermal resistance. Consider the soft recovery feature if low ringing and EMI are critical constraints in the design.

Diode Arrays Part Context

This part belongs to the BYV430 series of dual ultrafast power diodes from WeEn Semiconductors. The series offers variants with different voltage ratings, such as the BYV430W-600PQ which provides 600 V blocking capability. All members share similar ultrafast recovery characteristics and TO-3P packaging standards designed for high-power industrial applications.