BYVB32-100-E3/45

$0.65

Description：DIODE ARRAY GP 100V 18A TO263AB
Series：-

SKU:f666af323c6d Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

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Product introduction

BYVB32-100-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 18A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYVB32-100-E3/45

Description：DIODE ARRAY GP 100V 18A TO263AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：18A
Voltage - Forward (Vf) (Max) @ If：1.15 V @ 20 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：25 ns
Current - Reverse Leakage @ Vr：10 µA @ 100 V
Operating Temperature - Junction：-65°C ~ 150°C
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB (D2PAK)
Grade：-
Qualification：-

Diode Arrays datasheet and documents for BYVB32-100-E3/45

BYVB32-100-E3/45

Diode Arrays Overview

The BYVB32-100-E3/45 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It features an ITO-220AB (TO-220AC) package with matte tin-plated leads. The device supports a maximum repetitive peak reverse voltage of 100 V and a maximum average forward rectified current of 18 A at a case temperature of 125 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.15 V, a peak forward surge current capability of 150 A, and a maximum reverse recovery time of 25 ns. The component operates within a junction temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

Ultrafast recovery time for high-frequency switching applications
Glass passivated pellet chip junction for enhanced reliability
Low forward voltage drop to minimize conduction losses
High forward surge current capability

Diode Arrays Applications

High frequency rectification in switching mode power supplies
Inverter circuits
Freewheeling diodes
DC/DC converters
General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's official documentation to confirm compliance requirements. Confirm that the E3 suffix indicates RoHS compliance and lead-free terminals. Ensure the package designation matches the required mechanical footprint for your assembly process. Cross-reference the datasheet revision date to ensure you are using the most current technical specifications and ratings.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for synchronous rectification or bridgeless PFC topologies. The 100 V rating suits low-voltage output stages. Evaluate thermal management needs based on the 18 A continuous current rating and the specified thermal resistance from junction to case. Consider the 25 ns reverse recovery time for minimizing switching losses in high-speed environments compared to standard recovery diodes.

Diode Arrays Part Context

This part belongs to the BYV32 series family, which includes variants with different voltage ratings ranging from 50 V to 200 V. The BYVB32 variant specifically utilizes the D2PAK (TO-263AB) surface-mount package, whereas the BYVF32 uses the ITO-220AB through-hole package. The BYV32 series is designed for general-purpose ultrafast rectification, offering a balance of speed and current handling capacity for industrial and consumer electronics.

Diode Arrays Replacement Considerations

Direct substitutes within the same voltage and current class include the BYVB32-150-E3/45 and BYVB32-200-E3/45, provided the higher voltage ratings do not conflict with design constraints. Verify pinout compatibility and thermal performance before substitution.