Diode Arrays BYVB32-100-E3/81 product image

BYVB32-100-E3/81

$1.37
  • Description:DIODE ARRAY GP 100V 18A TO263AB
  • Series:-

SKU:c114f839b269 Category: Brand:

  
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BYVB32-100-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 18A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYVB32-100-E3/81

  • Description:DIODE ARRAY GP 100V 18A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):18A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYVB32-100-E3/81

BYVB32-100-E3/81

Diode Arrays Overview

The BYVB32-100-E3/81 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It utilizes glass passivated pellet chip junction technology and is housed in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 18 A at a case temperature of 125 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.15 V, a peak forward surge current capability of 150 A, and a typical reverse recovery time of 25 ns. The component operates within a junction temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast recovery time with low switching losses for high efficiency
  • Glass passivated pellet chip junction construction
  • High forward surge current capability
  • Low forward voltage drop

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverter circuits
  • Freewheeling diodes
  • DC/DC converters
  • General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's official documentation to confirm the exact package type and compliance status. Confirm that the requested revision matches the required mechanical dimensions and thermal resistance values. Ensure the procurement channel provides valid traceability for the Vishay General Semiconductor Diodes Division product line.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for synchronous rectification or freewheeling duties. The TO-263AB package offers a balance of thermal performance and board space efficiency. Evaluate the 25 ns reverse recovery time against the circuit's switching frequency requirements to ensure minimal reverse recovery charge losses.

Diode Arrays Part Context

This part belongs to the BYV32 series family, which includes variants with different voltage ratings ranging from 50 V to 200 V. The BYVB32 designation specifically identifies the D2PAK (TO-263AB) surface-mount package variant within this series. Other members of the family utilize TO-220AB or ITO-220AB through-hole packages.

Diode Arrays Replacement Considerations

Direct replacements within the same series include BYVB32-50, BYVB32-150, and BYVB32-200, provided the voltage rating aligns with the application requirements. Cross-package equivalents such as BYVF32-100 are available in the ITO-220AB form factor.

BYVB32-100-E3/81BYVB32-100-E3/81
$1.37
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