Diode Arrays BYVB32-200HE3_A/P product image

BYVB32-200HE3_A/P

$0.65
  • Description:DIODE ARRAY GP 200V 18A TO263AB
  • Series:-

SKU:31640db55e92 Category: Brand:

  
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BYVB32-200HE3_A/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 18A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYVB32-200HE3_A/P

  • Description:DIODE ARRAY GP 200V 18A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):18A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 200 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BYVB32-200HE3_A/P

BYVB32-200HE3_A/P

Diode Arrays Overview

The BYVB32-200HE3_A/P is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It utilizes a glass passivated pellet chip junction and is housed in a D2PAK (TO-263AB) package. The device supports a maximum average forward rectified current of 18 A per diode at a case temperature of 125 °C, with a peak forward surge current capability of 150 A. It offers a maximum repetitive peak reverse voltage of 200 V and features an ultrafast recovery time of 25 ns. The component is qualified to the AEC-Q101 standard for automotive applications.

Diode Arrays Feature Summary

  • Glass passivated pellet chip junction construction
  • Ultrafast recovery time for high efficiency
  • Low switching losses and low forward voltage drop
  • High forward surge current capability

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverter circuits
  • Freewheeling diodes
  • DC/DC converters
  • General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's official documentation to confirm compliance requirements. Confirm that the HE3 suffix indicates RoHS compliance and AEC-Q101 qualification for the ITO-220AB or D2PAK packages as specified in the datasheet. Ensure the revision code matches the required version for your design implementation.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for high-frequency power conversion. The D2PAK package provides efficient thermal management for high current applications. Verify that the 200 V reverse voltage rating meets the circuit's peak inverse voltage requirements and that the 25 ns recovery time aligns with the switching frequency constraints.

Diode Arrays Part Context

This part belongs to the BYV32 series of ultrafast rectifiers from Vishay General Semiconductor. The series includes variants with different voltage ratings and package options such as TO-220AB and ITO-220AB. The BYVB32 designation specifically identifies the D2PAK surface-mount package variant within this family of high-reliability power diodes.

Diode Arrays Replacement Considerations

Direct substitutes include other BYVB32-200 variants with different suffixes such as BYVB32-200-M3/I or BYVB32-200HM3/I, provided the electrical characteristics and package dimensions are compatible with the existing footprint.

Diode Arrays FAQ

What does the HE3 suffix indicate for this component?

The HE3 suffix denotes that the component is RoHS compliant and AEC-Q101 qualified.

Is this component suitable for automotive applications?

Yes, the HE3 suffix indicates that the component is AEC-Q101 qualified for automotive use.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

BYVB32-200HE3_A/PBYVB32-200HE3_A/P
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