BYVF32-200HE3_A/P

Diode Arrays Overview

The BYVF32-200HE3_A/P is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It features an ITO-220AB package and provides a maximum repetitive peak reverse voltage of 200 V with an average forward rectified current rating of 18 A at a case temperature of 125 °C. The device exhibits a maximum instantaneous forward voltage drop of 1.15 V at 20 A and a typical junction capacitance of 45 pF. It supports a peak forward surge current of 150 A and operates within a junction temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

• Glass passivated pellet chip junction construction for high reliability
• Ultrafast recovery time enabling low switching losses and high efficiency
• Low forward voltage drop combined with high forward surge capability
• AEC-Q101 qualified for automotive applications

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Inverter circuits
• Freewheeling diodes
• DC/DC converters
• General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm compliance requirements. The HE3 suffix indicates RoHS compliance and adherence to JESD 201 class 2 whisker testing standards. Confirm that the ITO-220AB package variant matches the intended thermal management and mounting specifications for the target application design.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for high-frequency power conversion. The ITO-220AB package offers electrical isolation from the heatsink, which is advantageous for certain circuit topologies. Ensure the operating conditions remain within the specified 150 °C maximum junction temperature limit to maintain device integrity and performance longevity.

Diode Arrays Part Context

This part belongs to the BYV32 series family, which includes variants with different voltage ratings ranging from 50 V to 200 V. The BYVF32 designation specifically identifies the ITO-220AB package form factor within this product line. The series utilizes Superectifier technology to deliver fast switching characteristics suitable for modern high-efficiency power electronics designs.

Diode Arrays Replacement Considerations

Direct substitutes include other BYVF32-200 variants such as BYVF32-200-E3/45 or BYVF32-200HE3_B/P. Verify pinout compatibility and thermal resistance values before substitution.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the BYVF32-200HE3_A/P?

The maximum repetitive peak reverse voltage (VRRM) is 200 V.

Does the BYVF32-200HE3_A/P meet automotive qualification standards?

Yes, the HE3 suffix indicates that the device is AEC-Q101 qualified.

What is the typical reverse recovery time for this component?

The maximum reverse recovery time (trr) is 25 ns under specified test conditions.