C2D05120E-TR

Overview

The Wolfspeed C2D05120E-TR is a discrete Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion. It features a 1200 V repetitive reverse voltage rating and a continuous forward current of 5 A. The device utilizes a D2PAK-2 (TO-263-2) surface-mount package, facilitating automated assembly in compact designs. Key electrical characteristics include a maximum forward voltage of 1.8 V at rated current and a low reverse leakage current of 200 µA. It supports a forward surge current of 100 A and operates within a junction temperature range of -55 °C to +175 °C. The component is supplied in tape and reel packaging.

Feature Summary

• Utilizes Silicon Carbide technology to achieve ultra-low forward voltage drop, significantly reducing conduction losses compared to silicon alternatives.
• Features a true unipolar structure with zero reverse recovery charge, enabling high-frequency operation and minimizing switching losses.
• Designed with robust thermal management capabilities to support high-power density applications in demanding environments.

Applications

• Power factor correction (PFC) circuits
• DC-DC converters
• Uninterruptible power supplies (UPS)
• Solar micro-inverters

Procurement Notes

Verify the specific suffix '-TR' indicates tape and reel packaging, distinct from tube packaging. Confirm RoHS compliance status through official documentation. Check end-of-life notifications as availability may vary. Ensure the supplier provides valid traceability documents for quality assurance.

Selection Notes

Select this component for applications requiring high blocking voltage and low forward voltage to maximize system efficiency. Consider the D2PAK-2 package for surface-mount compatibility and thermal performance. Evaluate thermal resistance requirements against the application's heat dissipation needs. Verify that the 5 A current rating meets the peak load demands of the circuit design.

Part Context

This part belongs to Wolfspeed's portfolio of discrete Silicon Carbide Schottky diodes. These components are engineered to replace traditional silicon rectifiers in high-voltage systems. The series offers improved reliability and reduced system size due to higher operating temperatures and frequencies supported by wide bandgap semiconductor technology.

Replacement Considerations

Cross-reference with other 1200V SiC Schottky diodes in the TO-263-2 package. Verify pinout compatibility and thermal characteristics before substitution. Ensure the alternative device meets or exceeds the 5 A forward current and 1.8 V forward voltage specifications.