C2M0025120D

$81.43

Description：SICFET N-CH 1200V 90A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:adb43e463eef Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 90A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：161 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2788 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：463W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C2M0025120D

Overview

The C2M0025120D is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET manufactured by Wolfspeed. It features a 1200 V drain-source voltage rating and a maximum continuous drain current of 63 A at a case temperature of 25°C. The device exhibits a typical on-state resistance of 25 mΩ at VGS = 20 V and ID = 50 A. Key electrical parameters include a gate threshold voltage ranging from 2.0 V to 4.0 V, an input capacitance of 3140 pF, and a total gate charge of 194 nC. The component supports a maximum power dissipation of 378 W and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
High-speed switching capabilities supported by low internal capacitances
Avalanche ruggedness and resistance to latch-up for enhanced reliability
Halogen-free construction compliant with RoHS standards

Applications

Solar inverters
Switch mode power supplies
High voltage DC/DC converters
Battery chargers
Motor drive systems

Procurement Notes

Verify the specific revision level against the latest Wolfspeed datasheet prior to finalizing designs, as product documentation may undergo updates. Confirm that the TO-247-3 package dimensions align with the target PCB footprint and thermal management requirements. Ensure that the selected gate driver circuitry accommodates the recommended operational gate voltage of 20V and the negative turn-off voltage specification to guarantee proper switching performance.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200V where reduced cooling requirements and increased system efficiency are priorities. The device is suitable for designs aiming to increase power density and system switching frequency. Consider the thermal resistance characteristics and safe operating area when designing for high-current loads or elevated ambient temperatures.

Part Context

This part belongs to the C2M™ series of Silicon Carbide Power MOSFETs from Wolfspeed. The series utilizes advanced SiC technology to deliver superior performance compared to traditional silicon devices. The TO-247-3 package provides a standardized form factor for through-hole mounting, facilitating integration into existing industrial and commercial power electronics architectures.