C2M0040120D

$45.13

Description：SICFET N-CH 1200V 60A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:f28eb4b1b821 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 60A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：115 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1893 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C2M0040120D

Overview

The C2M0040120D is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET manufactured by Wolfspeed. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 55A at 25°C case temperature. The device exhibits a typical on-state resistance of 44mΩ at VGS=20V and ID=40A, with a total gate charge of 120nC. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-247-3 package.

Feature Summary

High blocking voltage combined with low on-resistance for improved efficiency
High-speed switching capability supported by low capacitances
Resistant to latch-up for enhanced reliability
Halogen-free and RoHS compliant construction

Applications

Solar inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Battery Chargers
Motor Drive systems

Procurement Notes

Verify the specific revision number against the latest official datasheet before finalizing procurement decisions. Confirm that the component marking matches the ordering part number exactly. Ensure that thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Cross-reference electrical characteristics with the most recent Wolfspeed documentation to ensure compliance with current specifications.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and high power density. Consider the 1200V rating and low on-resistance for efficient power conversion in solar and motor drive systems. Evaluate the thermal performance based on the specified junction temperature limits and power dissipation capabilities. Ensure gate driver circuits are compatible with the recommended operational gate-source voltage levels for optimal performance.

Part Context

This device belongs to the C2M family of Silicon Carbide Power MOSFETs from Wolfspeed. It represents an evolution in wide-bandgap semiconductor technology designed to replace traditional silicon devices in high-performance power electronics. The TO-247-3 package provides a standardized form factor for easy integration into existing board layouts while offering robust thermal and electrical performance.