C2M0280120D

$8.51

Description：SICFET N-CH 1200V 10A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:98a6a3b73d50 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 10A TO247-3
Series：Z-FET™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id：2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：20.4 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：259 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C2M0280120D

Overview

The C2M0280120D is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET housed in a TO-247-3 package. It features a maximum drain-source voltage of 1200 V and a typical on-state resistance of 320 mΩ at 25°C. The device supports a continuous drain current of 11 A at 25°C case temperature, with a pulsed drain current capability of 20 A. Key electrical parameters include a gate threshold voltage ranging from 2.0 V to 4 V, an input capacitance of 267 pF, and a total gate charge of 19 nC. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Utilizes Wolfspeed C2M SiC technology for high blocking voltage and low on-resistance.
Features fast intrinsic diode characteristics with low reverse recovery charge.
Designed for high-speed switching with minimized capacitances.

Applications

Renewable energy systems
High voltage DC/DC converters
Switch Mode Power Supplies
Uninterruptible Power Supplies

Procurement Notes

Verify the specific manufacturer branding on the physical component, as Wolfspeed is transitioning from Cree Inc., and products may bear either name. Confirm that the received unit matches the C2M0280120D designation and TO-247-3 package outline. Ensure compliance with RoHS and REACh requirements by requesting the latest declarations from the supplier or manufacturer documentation.

Selection Notes

Select this component for designs requiring robust performance in high-voltage environments up to 1200 V. The TO-247-3 package facilitates through-hole mounting and efficient thermal management via the drain tab. Consider the 320 mΩ on-resistance and 11 A continuous current rating when sizing heatsinks and determining system efficiency targets under specified operating temperatures.

Part Context

This part belongs to the Wolfspeed C2M series of discrete Silicon Carbide MOSFETs. These devices are engineered to replace traditional silicon counterparts in power electronics applications demanding higher efficiency and power density. The TO-247-3 form factor provides industry-standard pin compatibility for easy integration into existing circuit board layouts.

Replacement Considerations

Direct replacement requires verifying pinout compatibility and ensuring the substitute device meets or exceeds the 1200 V breakdown voltage and 320 mΩ on-resistance specifications. Thermal resistance characteristics must be evaluated to maintain safe junction temperatures under identical load conditions.