C2M1000170J

$10.80

Description：SICFET N-CH 1700V 5.3A D2PAK
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:fb5ea1514615 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1700V 5.3A D2PAK
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id：4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：78W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7 (Straight Leads)

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C2M1000170J

Overview

The Wolfspeed C2M1000170J is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET housed in a TO-263-7 package. It features a maximum Drain-Source Voltage (VDS) of 1700 V and a typical On-State Resistance (RDS(on)) of 0.8 Ω at VGS = 20 V and ID = 2 A. The device supports a continuous drain current of 5.6 A at TC = 25°C and operates within a junction temperature range of -55°C to +150°C. Key electrical characteristics include a total gate charge (Qg) of 13 nC, an internal gate resistance of 27 Ω, and a reverse diode forward voltage of 3.8 V at ISD = 1 A.

Feature Summary

High blocking voltage combined with low on-state resistance for efficient power handling
Separate Kelvin source pin to minimize parasitic inductance and improve drive performance
Ultra-low drain-gate capacitance and fast intrinsic body diode with low reverse recovery charge
Wide creepage distance between drain and source for enhanced isolation reliability

Applications

Auxiliary Power Supplies
Switch Mode Power Supplies
High-voltage capacitive loads

Procurement Notes

Verify the specific suffix 'J' corresponds to the TO-263-7 package variant when sourcing. Confirm RoHS compliance status via official documentation as regulatory requirements may evolve. Check for any recent product change notices regarding manufacturing sites or material composition updates before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring low switching losses and robust thermal performance. Ensure the gate driver can support the recommended operational voltage range of -5 V to +20 V. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance to maintain operation within the safe operating area under varying load conditions.

Part Context

This part belongs to the Wolfspeed C2M™ SiC MOSFET family, designed for high-efficiency power conversion systems. It utilizes Wolfspeed's proprietary silicon carbide technology to deliver superior performance compared to traditional silicon devices. The TO-263-7 package provides a balance of electrical performance and mechanical robustness suitable for surface-mount assembly.