C3D02065E

$1.56

Description：DIODE SIL CARB 650V 8A TO252-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:ddb6a6ac43d6 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 8A TO252-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：8A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 2 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 650 V
Capacitance @ Vr, F：120pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C3D02065E

Overview

The C3D02065E is a 650 V Silicon Carbide Schottky Diode manufactured by Wolfspeed, Inc. It features a TO-252-2 package and supports continuous forward currents of 8 A at 25 °C and 2 A at 161 °C. The device exhibits a maximum forward voltage of 1.7 V at 2 A and 25 °C, with a peak surge current capability of 16.5 A. Operating temperatures range from -55 °C to +175 °C, and it offers zero reverse recovery charge for fast switching.

Feature Summary

Zero reverse recovery current and zero forward recovery voltage
Positive temperature coefficient on forward voltage
High-frequency operation with temperature-independent switching behavior

Applications

Switch mode power supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free wheeling diodes in inverter stages
AC/DC converters

Procurement Notes

Verify the specific part number against official manufacturer documentation to ensure correct voltage rating and package type. Confirm that the component meets required industrial qualification standards and thermal management specifications for your target operating environment before finalizing procurement decisions.

Selection Notes

Select this component when replacing bipolar rectifiers to achieve essentially no switching losses and higher system efficiency. Consider its positive temperature coefficient for parallel device operation without thermal runaway risks. Ensure the TO-252-2 package fits your board layout and thermal dissipation requirements.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's portfolio designed to reduce heat sink requirements and improve system-level power density. It utilizes optimized technology specifically tailored for PFC boost diode applications, offering robust performance in demanding power conversion environments.