SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The C3D04060F is a third-generation 600 V Silicon Carbide Schottky diode in a TO-220-F2 package. It features a maximum repetitive peak reverse voltage of 600 V and a continuous forward current rating of 9 A at 25°C case temperature, derating to 3 A at 150°C. The typical forward voltage is 1.5 V at 4 A and 25°C, rising to 2.4 V max at 175°C. Reverse current is typically 5 µA at 600 V and 25°C. Power dissipation is 30.9 W at 25°C. Junction temperature range is -55°C to +175°C.
Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the component meets all applicable RoHS and REACH compliance requirements for your region. Ensure the supplier provides valid traceability documentation. Check for any recent datasheet revisions that may impact mechanical dimensions or electrical characteristics. Validate compatibility with your assembly process specifications.
Select this component when high-frequency operation and low conduction losses are critical. Consider the thermal resistance from junction to case for heatsink sizing. Evaluate the forward voltage characteristics across the expected operating temperature range. Assess the need for fully isolated cases in high-voltage isolation scenarios. Compare system-level efficiency gains against alternative silicon-based solutions.
This device belongs to Wolfspeed's third-generation 600 V Silicon Carbide Schottky diode family. It utilizes SiC technology to achieve higher efficiency standards than silicon-based solutions. The product enables higher switching frequencies and power densities in power electronics systems. It is designed to be easily paralleled without concern for thermal runaway.
No public confirmed substitute part numbers are available in the provided documentation.
No, as a majority carrier device, it has zero reverse recovery charge.
The maximum junction temperature is +175°C.