C3D08065A

Overview

The C3D08065A is a third-generation 650 V Silicon Carbide Schottky diode in a TO-220-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 24 A at 25°C case temperature, decreasing to 8 A at 152°C. The typical forward voltage is 1.5 V at 8 A and 25°C, rising to 2.1 V at 175°C. Non-repetitive peak forward surge current reaches 71 A at 25°C for a 10 ms half-sine wave pulse. Power dissipation is rated at 107 W at 25°C case temperature.

Feature Summary

• Low forward voltage drop with a positive temperature coefficient
• Zero reverse recovery current and zero forward recovery voltage
• Temperature-independent switching behavior

Applications

• Industrial switched mode power supplies
• Uninterruptible and auxiliary power supplies
• Boost stages for PFC and DC-DC converters
• Solar inverters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing type and compliance status. Confirm RoHS and REACH declarations are current before procurement. Ensure thermal management design accounts for the specified junction-to-case thermal resistance and derating curves provided in the datasheet.

Selection Notes

Select this component for applications requiring high-frequency operation and reduced cooling requirements compared to silicon solutions. Evaluate the positive temperature coefficient for safe paralleling capabilities without thermal runaway concerns. Consider the 175°C maximum junction temperature for high-temperature industrial environments.

Part Context

This device belongs to Wolfspeed's third-generation 650 V Silicon Carbide Schottky diode family. It utilizes SiC technology to achieve higher efficiency standards than silicon-based alternatives. The product enables higher operating frequencies and power densities while offering improved thermal performance.

Replacement Considerations

SiC diodes can be easily paralleled to meet various application demands. They serve as direct replacements for current silicon diodes in many topologies, offering lower overall system costs due to reduced cooling requirements.