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The C3D10065E is a 650 V Silicon Carbide Schottky Diode in a TO-252-2 package. It features a maximum continuous forward current of 10 A at 155 °C and 32 A at 25 °C. The device exhibits zero reverse recovery current and zero forward recovery voltage, enabling high-frequency operation with minimal switching losses. Electrical characteristics include a typical forward voltage of 1.5 V at 10 A and 25 °C, and a thermal resistance from junction to case of 1.0 °C/W. Operating temperatures range from -55 °C to +175 °C.
Verify the specific ordering suffix 'TR' against official Wolfspeed documentation to confirm tape-and-reel packaging availability, as datasheet details may vary by revision. Ensure compliance requirements such as RoHS and REACH are confirmed via the manufacturer's declaration documents prior to integration into production designs.
Select this component for applications requiring low switching losses and high efficiency at 650 V blocking voltage. Consider the TO-252-2 package constraints for thermal management and PCB layout. Evaluate the forward voltage drop and reverse leakage current specifications against the system's operating temperature range to ensure performance stability.
This discrete silicon carbide Schottky diode belongs to the C3D series designed for industrial power conversion. It serves as an alternative to traditional silicon rectifiers, offering superior thermal performance and reduced heat sink requirements. The device is manufactured by Wolfspeed, Inc., utilizing advanced SiC technology for robust operation in demanding electrical environments.
Direct replacements within the same family include C3D10065A (TO-220-2) and C3D08065I (TO-220-2), though package differences require mechanical adaptation. Verify pinout compatibility and thermal resistance values when substituting with other SiC Schottky diodes from different manufacturers.