C3D12065A

$4.17

Description：DIODE SIL CARB 650V 35A TO220-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:665347ee9d86 Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 35A TO220-2
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：35A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 12 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：74 µA @ 650 V
Capacitance @ Vr, F：641.5pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-220-2
Supplier Device Package：TO-220-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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C3D12065A

Overview

The C3D12065A is a third-generation 650 V Silicon Carbide Schottky diode in a TO-220-2 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 12 A at 150 °C. The device exhibits a typical forward voltage of 1.5 V at 12 A and 25 °C, with a maximum reverse current of 74 µA at 650 V and 25 °C. Power dissipation is rated at 143 W at 25 °C case temperature. Thermal resistance from junction to case is typically 1.05 °C/W.

Feature Summary

Zero reverse recovery charge due to majority carrier operation
Low forward voltage drop with positive temperature coefficient
Temperature-independent switching behavior

Applications

Industrial switched mode power supplies
Uninterruptible and auxiliary power supplies
Boost stages for PFC and DC-DC converters
Solar inverters

Procurement Notes

Verify the specific revision status against the latest Wolfspeed datasheet before finalizing designs. Confirm compliance requirements such as RoHS and REACH declarations directly with the manufacturer or authorized distributors. Ensure thermal management solutions align with the specified junction-to-case thermal resistance and derating curves provided in the official documentation.

Selection Notes

Select this component for applications requiring high-frequency switching and reduced conduction losses compared to silicon alternatives. Consider the 12 A continuous current capability at elevated temperatures when sizing heat sinks. Verify that the system's operating voltage does not exceed the 650 V blocking limit under all transient conditions.

Part Context

This discrete SiC Schottky diode belongs to Wolfspeed's third-generation 650 V family. It is designed to replace silicon rectifiers in power electronics systems to achieve higher efficiency and power density. The TO-220-2 through-hole package facilitates easy integration into industrial and commercial power conversion circuits.