C3D16065D1

Overview

The C3D16065D1 is a third-generation 650 V Silicon Carbide Schottky diode in a TO-247-3 package. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 43 A at 25°C case temperature. The device exhibits a typical forward voltage of 1.5 V at 16 A and 25°C, with a maximum reverse current of 95 µA at 650 V and 25°C. Thermal resistance from junction to case is typically 0.86 °C/W, supporting a junction temperature range of -55°C to +175°C.

Feature Summary

• Zero reverse recovery current and forward recovery voltage due to majority carrier operation
• Low forward voltage drop with a positive temperature coefficient for stable thermal performance
• Temperature-independent switching behavior and low leakage current characteristics

Applications

• Industrial power supplies
• Battery charging systems
• Switch mode power supplies
• AC/DC converters
• Server and telecom power supplies

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-247-3 tube packaging aligns with assembly requirements. Ensure compliance with RoHS and REACH standards as documented by Wolfspeed for this component series.

Selection Notes

Select this component when high-frequency operation and elevated efficiency are required compared to silicon-based solutions. The SiC technology allows for reduced cooling requirements and higher power densities. Verify that the system can accommodate the specified junction temperature limits and mounting torque constraints.

Part Context

This component belongs to the Wolfspeed third-generation 650 V Silicon Carbide Schottky diode family. It is designed to replace traditional silicon rectifiers in applications demanding lower switching losses and higher operating temperatures. The TO-247-3 form factor facilitates through-hole mounting for industrial and commercial power electronics.

Replacement Considerations

Direct substitutes within the same generation include other C3D16065 variants with different package options or slight parameter variations. Cross-referencing with older generations may require re-evaluation of thermal and electrical margins.

FAQ

Does the C3D16065D1 exhibit reverse recovery charge?

No, as a Silicon Carbide Schottky diode utilizing majority carriers, it has zero reverse recovery charge.

What is the maximum junction temperature for this diode?

The maximum junction temperature is +175°C.