C3D1P7060Q

Description：DIODE SIL CARB 600V 9.7A 10QFN
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR)

SKU:ceeb3130612e Category: Single Diodes Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 600V 9.7A 10QFN
Series：Z-Rec®
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：600 V
Current - Average Rectified (Io)：9.7A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 1.7 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：50 µA @ 600 V
Capacitance @ Vr, F：100pF @ 0V, 1MHz
Mounting Type：Surface Mount
Package / Case：10-PowerTQFN
Supplier Device Package：10-Power QFN (3.3x3.3)
Operating Temperature - Junction：-55°C ~ 160°C
Grade：-
Qualification：-

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C3D1P7060Q

Overview

The C3D1P7060Q is a 600 V Silicon Carbide Schottky diode in a QFN 3x3 package. It features a maximum repetitive peak reverse voltage of 600 V and a continuous forward current of 9.7 A at 25 °C case temperature, decreasing to 1.7 A at 150 °C. The device exhibits a typical forward voltage of 1.5 V at 1.7 A and 25 °C, with a maximum reverse current of 15 μA at 600 V. Operating junction temperatures range from -55 °C to +160 °C.

Feature Summary

Optimized for power factor correction boost diode applications
Zero reverse recovery current due to majority carrier operation
Temperature-independent switching behavior with positive temperature coefficient on forward voltage

Applications

Switch mode power supplies
LED lighting
Medical imaging services

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the QFN 3x3 package dimensions and recommended landing pattern align with your PCB layout requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance and power derating curves under actual operating conditions.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses and reduced heat sink requirements. Consider the positive temperature coefficient of the forward voltage when designing parallel device configurations to prevent thermal runaway. Evaluate the low reverse leakage current characteristics for efficiency optimization in sensitive circuit topologies.

Part Context

This silicon carbide Schottky rectifier belongs to Wolfspeed's portfolio of wide-bandgap semiconductor devices designed for high-efficiency power conversion. It replaces traditional silicon PN junction diodes in applications demanding superior thermal performance and faster switching speeds without the associated reverse recovery charge penalties.