Diode Arrays C3D20065D product image

C3D20065D

$6.15
  • Description:DIODE ARR SIC 650V 27.5A TO247-3
  • Series:Z-Rec®

SKU:edc5af8811cd Category: Brand:

  
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C3D20065D is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Wolfspeed, Inc.. Its product description is DIODE ARR SIC 650V 27.5A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for C3D20065D

  • Description:DIODE ARR SIC 650V 27.5A TO247-3
  • Series:Z-Rec®
  • Mfr:Wolfspeed, Inc.
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):27.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:60 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for C3D20065D

C3D20065D

Diode Arrays Overview

The Wolfspeed C3D20065D is a third-generation, 650V Silicon Carbide Schottky Barrier diode housed in a TO-247-3 package. It features dual internal die configurations for enhanced current handling and thermal performance. Key electrical specifications include a maximum repetitive peak reverse voltage of 650V and a continuous forward current rating of up to 55A per device at 25°C case temperature. The component exhibits zero reverse recovery charge, ensuring minimal switching losses and high-frequency operation capabilities.

Diode Arrays Feature Summary

  • Zero reverse recovery current and forward recovery voltage eliminate switching losses associated with minority carrier storage.
  • Temperature-independent switching behavior ensures stable performance across the full operating junction temperature range.
  • Capable of parallel device operation without risk of thermal runaway, allowing scalable current capacity.
  • High dV/dt ruggedness supports robust performance in high-speed switching environments.

Diode Arrays Applications

  • Boost diodes in Power Factor Correction (PFC) stages
  • Free-wheeling diodes in inverter stages
  • Switch Mode Power Supplies (SMPS)
  • Solar inverters
  • AC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the procurement channel provides valid RoHS and REACh compliance documentation. Ensure the supplier source is authorized to guarantee product authenticity and traceability. Check for any recent datasheet revisions that may impact mechanical or electrical parameters.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency and reduced cooling requirements due to low conduction losses. Evaluate the thermal resistance from junction to case against the system's heat dissipation strategy. Consider the dual-die structure for applications demanding higher current density within the standard TO-247 footprint compared to single-die alternatives.

Diode Arrays Part Context

This part belongs to Wolfspeed’s third-generation 650V Silicon Carbide Schottky Diode family. It is engineered to replace traditional silicon rectifiers in power electronics systems. The technology enables higher operating frequencies and power densities while maintaining reliability in industrial and renewable energy applications.

Diode Arrays Replacement Considerations

Direct pin-compatible replacements should be sought within the same Wolfspeed 650V SiC Schottky series. Verify that substitute parts meet or exceed the 650V blocking voltage and 55A continuous current ratings. Ensure the replacement package maintains the TO-247-3 form factor for board compatibility.

Diode Arrays FAQ

Does the C3D20065D exhibit reverse recovery charge?

No, as a majority carrier device, it has zero reverse recovery charge and zero forward recovery voltage.

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated up to +175°C.

How many internal dies are contained in the TO-247-3 package?

The package contains two internal dies configured to provide dual anode/cathode legs.

C3D20065DC3D20065D
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