C3M0016120K1

$43.32

Description：MOSFET N-CH 1200V 125A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:c12cd9de80fc Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 125A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：22mOhm @ 80.28A, 15V
Vgs(th) (Max) @ Id：3.8V @ 22.08mA
Gate Charge (Qg) (Max) @ Vgs：223 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：6922 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：483W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0016120K1

Overview

The Wolfspeed C3M0016120K1 is a silicon carbide N-channel enhancement mode MOSFET rated for 1200V. It features a low on-resistance of 16mΩ at 25°C and supports a continuous drain current of 125A. The device utilizes a TO-247-4L LP package with a separate driver source pin to minimize gate ringing. Key electrical parameters include a maximum gate-source voltage of +19V transient, a junction temperature range of -55°C to +175°C, and a thermal resistance from junction to case of 0.23°C/W.

Feature Summary

Optimized package design incorporating a separate driver source pin to reduce switching losses and minimize gate ringing.
High blocking voltage capability combined with low on-resistance for improved system efficiency.
Fast intrinsic diode characterized by low reverse recovery charge (Qrr) and short reverse recovery time.
Low capacitances enabling high-speed switching operations.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS
UPS

Procurement Notes

Verify the specific ordering suffix K1 corresponds to the TO-247-4L LP package variant when sourcing. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Validate that the operating voltage and current limits align with the system's peak and continuous load conditions.

Selection Notes

Select this component for designs requiring high power density and reduced cooling requirements due to its efficient switching characteristics. The separate driver source pin makes it suitable for applications sensitive to gate ringing. Consider the 1200V rating for high-voltage topologies. Evaluate the thermal performance relative to the ambient environment and mounting torque specifications to ensure reliable operation within the 175°C junction limit.

Part Context

This part belongs to the Wolfspeed Silicon Carbide Power MOSFET family, specifically designed for high-performance power conversion. It represents an evolution in SiC technology aimed at replacing traditional silicon devices in demanding industrial and automotive environments. The TO-247-4L LP package offers a lower profile compared to standard variants, facilitating integration into compact systems.

Replacement Considerations

Cross-reference with other C3M0016120 series variants if package differences are acceptable. Verify pinout compatibility, particularly the driver source pin configuration, before substituting with similar 1200V SiC MOSFETs from other manufacturers.