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Product Detailed Parameters
- Description：SICFET N-CH 1200V 100A TO247-3
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：28.8mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：160 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：4818 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：469W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0021120D is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, designed for high-voltage power conversion. It features an N-channel enhancement mode configuration housed in a TO-247-3 package. Key electrical parameters include a drain-source voltage of 1200 V and a maximum continuous drain current of 81 A at 25°C case temperature. The device exhibits a typical on-resistance of 21 mΩ at 25°C and 38 mΩ at 175°C. Operating junction temperatures range from -40°C to +175°C.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage with low on-resistance
- High-speed switching capabilities supported by low capacitances
- Fast intrinsic diode characterized by low reverse recovery charge
- Halogen-free construction compliant with RoHS standards
Applications
- Solar inverters
- EV motor drive systems
- High voltage DC/DC converters
- Switched mode power supplies
- Load switch applications
Procurement Notes
Verify the specific part number against official manufacturer documentation to ensure authenticity. Confirm that the component matches the required TO-247-3 package dimensions and marking codes. Check for compliance with relevant environmental directives such as RoHS and REACH requirements before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring high efficiency and reduced cooling requirements due to its fast switching characteristics. Ensure the gate drive circuit supports the recommended operational voltage of 15V. Consider thermal management strategies based on the specified junction-to-case thermal resistance when designing the heat sink interface.
Part Context
This discrete power MOSFET belongs to the C3M family of silicon carbide devices. It utilizes Wolfspeed's proprietary C3M technology to deliver improved performance over traditional silicon-based solutions. The device is intended for industrial-grade applications where reliability and power density are critical design factors.
Replacement Considerations
Consult official datasheets for cross-reference information regarding alternative packages or current ratings within the same voltage class. Verify pinout compatibility and thermal characteristics before substituting with other manufacturers' components.
